300~380 T abs <1% , T=50%@405nm +- 10nm A+!,{G
425~680 Tave >90% , T=50%@720nm +-10nm ,,BP}f+l$
780~1200 nm T ave <1% ax>j3HKi
g9q}D-
用 (0.5H L 0.5H)^s (0.5L H 0.5L)^s (0.5L H 0.5L)^s 3個(gè)膜堆(2短1長(zhǎng) ) ,[IDC3.4^R
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f
H: Ta2O5 L:SiO2 %s"&|32
(De{r|
該如何設(shè)計(jì)